Vishay Precision Group FET, MOSFET Arrays SI7252DP-T1-GE3

Mosfet Array 2 N-Channel (Dual) 100V 36.7A 46W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 36.7A 46W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 100V 36.7A 46W Surface Mount PowerPAK® SO-8 Dual

100V 36.7A N-Ch MOSFET, 18mΩ Rds(on), SOP-8 Product overview: SI7252DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 36.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 36.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7252DP-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 813655-SI7252DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Power - Max: 46W
Supplier Device Package: PowerPAK SO-8 Dual
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8 Dual
Popularity: Low
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 18mOhm at 15A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 27nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1170pF at 50V
Current - Continuous Drain (Id) at 25°C: 36.7A
Vgs(th) (Maximum) at Id: 3.5V at 250μA
Part Number Series: SI7252

MOSFET 2N-CH 100V 36.7A PPAK 8SO