Mosfet Array 2 N-Channel (Dual) 100V 9.3A (Ta), 28.7A (Tc) 3.6W (Ta), 33.8W (Tc) Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 9.3A (Ta), 28.7A (Tc) 3.6W (Ta), 33.8W (Tc) Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 9.3A (Ta), 28.7A (Tc) 3.6W (Ta), 33.8W (Tc) Surface Mount PowerPAK® SO-8 Dual
Trans MOSFET N-CH 100V 9.3A 8-Pin PowerPAK SO EP T/R Product overview: SI7252ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7252ADP-T1-GE3
Win Source Part Number: 1336936-SI7252ADP-T1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.6W (Ta) , 33.8W (Tc)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SI7252
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) , 28.7A (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
MOSFET 2N-CH 100V 9.3A PPAK SO8
DUAL MOSFET, N-CH/100V/28.7A/POWE
DUAL N-CHANNEL 100-V (D-S) MOSFE
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SI7252ADP-T1-GE3TR-ND | 278-SI7252ADP-T1-GE3 | 1336936-SI7252ADP-T1-GE3 | SI7252ADP-T1-GE3 | 30AJ7385 | SI7252ADP-T1-GE3 |
| Product Name | FET, MOSFET Arrays | 100V 9.3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, N-Ch/100V/28.7A/powerpak So Rohs Compliant Vishay | FET, MOSFET Arrays |
| Package Type | SO-8; PowerPAK® SO-8 Dual | Tape and Reel | SO-8; SOT3 | TO-3 | SO-8; PowerPAK® SO-8 Dual | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 3600 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
