Manufacturer: Vishay
Win Source Part Number: 211664-SI7230DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 14A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 30V 9A PPAK 1212-8
N CHANNEL MOSFET, 30V, 14A POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 211664-SI7230DN-T1-GE3 | SI7230DN-T1-GE3-ND | SI7230DN-T1-GE3 | 16P3836 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7230DN-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 14A Powerpak, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | |||
| PD | 1500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
