Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-GE3 SI7224DN-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028619-SI7224DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7224DN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 17.8W, 23W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 14.5nC @ 10V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): FDS6984S_Q; FDS6984S; FDS6984S_NL; Introduction Date: October 16, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-GE3 - 028619-SI7224DN-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - SI7224DN-T1-GE3TR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - SI7224DN-T1-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Dual N Channel Mosfet, 30V Powerpak, Full Reel; Transistor Polarity Vishay - 16P3835 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7224DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028619-SI7224DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7224DN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 17.8W, 23W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 14.5nC @ 10V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): FDS6984S_Q; FDS6984S; FDS6984S_NL; Introduction Date: October 16, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-GE3 - 028619-SI7224DN-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-GE3
028619-SI7224DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-GE3 028619-SI7224DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028619-SI7224DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7224DN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 17.8W, 23W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 14.5nC @ 10V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): FDS6984S_Q; FDS6984S; FDS6984S_NL; Introduction Date: October 16, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028619-SI7224DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7224DN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 17.8W, 23W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 14.5nC @ 10V
Max Input Capacitance: 570pF @ 15V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): FDS6984S_Q; FDS6984S; FDS6984S_NL;
Introduction Date: October 16, 2007
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI7224DN-T1-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7224DN-T1-GE3TR-ND
FET, MOSFET Arrays SI7224DN-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7224DN-T1-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7224DN-T1-GE3
FET, MOSFET Arrays SI7224DN-T1-GE3
MOSFET 2N-CH 30V 6A PPAK 1212-8

MOSFET 2N-CH 30V 6A PPAK 1212-8

Supplier's Site Datasheet
Dual N Channel Mosfet, 30V Powerpak, Full Reel; Transistor Polarity Vishay - 16P3835 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 30V Powerpak, Full Reel; Transistor Polarity Vishay
16P3835
Dual N Channel Mosfet, 30V Powerpak, Full Reel; Transistor Polarity Vishay 16P3835
DUAL N CHANNEL MOSFET, 30V POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.027ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 30V POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.027ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7224DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7224DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7224DN-T1-GE3
MOSFET 2N-CH 30V 6A PPAK 1212

MOSFET 2N-CH 30V 6A PPAK 1212

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028619-SI7224DN-T1-GE3 SI7224DN-T1-GE3TR-ND SI7224DN-T1-GE3 16P3835 SI7224DN-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-GE3 FET, MOSFET Arrays FET, MOSFET Arrays Dual N Channel Mosfet, 30V Powerpak, Full Reel; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 30 volts 30 volts
PD 17800 to 23000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual TO-3
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