Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3 SI7224DN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 042621-SI7224DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 17.8W, 23W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 14.5nC @ 10V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 042621-SI7224DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 17.8W, 23W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 14.5nC @ 10V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3 - 042621-SI7224DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3
042621-SI7224DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3 042621-SI7224DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 042621-SI7224DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 17.8W, 23W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 14.5nC @ 10V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 042621-SI7224DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 17.8W, 23W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 14.5nC @ 10V
Max Input Capacitance: 570pF @ 15V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI7224DN-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7224DN-T1-E3-ND
FET, MOSFET Arrays SI7224DN-T1-E3-ND
Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7224DN-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7224DN-T1-E3
FET, MOSFET Arrays SI7224DN-T1-E3
MOSFET 2N-CH 30V 6A PPAK 1212-8

MOSFET 2N-CH 30V 6A PPAK 1212-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7224DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7224DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7224DN-T1-E3
MOSFET 2N-CH 30V 6A PPAK 1212

MOSFET 2N-CH 30V 6A PPAK 1212

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 042621-SI7224DN-T1-E3 SI7224DN-T1-E3-ND SI7224DN-T1-E3 SI7224DN-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 17800 to 23000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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