Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7224DN-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI7224DN-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7224DN-T1-E3-ND
FET, MOSFET Arrays SI7224DN-T1-E3-ND
Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
Singapore
30V 6A MOSFET Transistor
289-SI7224DN-T1-E3
30V 6A MOSFET Transistor 289-SI7224DN-T1-E3
MOSFET 2N-CH 30V 6A PPAK 1212 Product overview: SI7224DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7224DN-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 6A PPAK 1212 Product overview: SI7224DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7224DN-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI7224DN-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7224DN-T1-E3
FET, MOSFET Arrays SI7224DN-T1-E3
MOSFET 2N-CH 30V 6A PPAK 1212-8

MOSFET 2N-CH 30V 6A PPAK 1212-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3 - 042621-SI7224DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3
042621-SI7224DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3 042621-SI7224DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 042621-SI7224DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 17.8W, 23W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 14.5nC @ 10V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 042621-SI7224DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 17.8W, 23W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 14.5nC @ 10V
Max Input Capacitance: 570pF @ 15V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7224DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7224DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7224DN-T1-E3
MOSFET 2N-CH 30V 6A PPAK 1212

MOSFET 2N-CH 30V 6A PPAK 1212

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7224DN-T1-E3-ND 289-SI7224DN-T1-E3 SI7224DN-T1-E3 042621-SI7224DN-T1-E3 SI7224DN-T1-E3
Product Name FET, MOSFET Arrays 30V 6A MOSFET Transistor FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7224DN-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type PowerPAK® 1212-8 Dual Tape & Reel (TR) PowerPAK® 1212-8 Dual SOT3; PowerPAK 1212-8 Dual
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
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