Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7218DN-T1-E3 SI7218DN-T1-E3

Manufacturer: Vishay
Win Source Part Number: 028617-SI7218DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 23W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 700pF @ 15V
Maximum Rds On at Id,Vgs: 25 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

MOSFET 2N-CH 30V 24A PPAK 1212 Product overview: SI7218DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7218DN-T1-E3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 24A 23W Surface Mount PowerPAK® 1212-8 Dual