MOSFET 2N-CH 30V 4.9A 1212-8 Product overview: SI7212DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7212DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 4.9A 1212-8
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Manufacturer: Vishay
Win Source Part Number: 028615-SI7212DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7212DN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Maximum Rds On at Id,Vgs: 36 mOhm @ 6.8A, 10V
Alternative Parts (Cross-Reference): QS8K12TCR; uPA2757GR; UPA2757GR-E2-AT;
Introduction Date: September 10, 2004
ECCN: EAR99
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 4.9A PPAK 1212
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
MOSFET, DUAL N CHANNEL, 30V, 4.9A, POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.03ohm; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 30V, 4.9A, POWERPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.03ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, DUAL/N-CH/30V/4.9A/P
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7212DN-T1-GE3 | SI7212DN-T1-GE3 | SI7212DN-T1-GE3TR-ND | 028615-SI7212DN-T1-GE3 | SI7212DN-T1-GE3 | SI7212DN-T1-GE3 | 33P5385 | 57AJ0459 |
| Product Name | 30V 4.9A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7212DN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N Channel, 30V, 4.9A, Powerpak, Full Reel; Transistor Polarity Vishay | Mosfet, Dual/n-Ch/30V/4.9A/powerpak 1212 Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| PD | 1300 milliwatts | 1300 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts |
