Manufacturer: Vishay
Win Source Part Number: 122001-SI7212DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Maximum Rds On at Id,Vgs: 36 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
MOSFET 2N-CH 30V 4.9A PPAK 1212
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 122001-SI7212DN-T1-E3 | SI7212DN-T1-E3TR-ND | SI7212DN-T1-E3 | SI7212DN-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7212DN-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| V(BR)DSS | 30 volts | |||
| PD | 1300 milliwatts |
