Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7212DN-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI7212DN-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7212DN-T1-E3TR-ND
FET, MOSFET Arrays SI7212DN-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7212DN-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7212DN-T1-E3DKR-ND
FET, MOSFET Arrays SI7212DN-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7212DN-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7212DN-T1-E3CT-ND
FET, MOSFET Arrays SI7212DN-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
Singapore
30V 4.9A MOSFET Transistor
278-SI7212DN-T1-E3
30V 4.9A MOSFET Transistor 278-SI7212DN-T1-E3
2 N-CH MOSFET 30V 4.9A 36mR SMT Product overview: SI7212DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7212DN-T1-E3 can be used for catalog matching and distributor lookup.

2 N-CH MOSFET 30V 4.9A 36mR SMT Product overview: SI7212DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7212DN-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7212DN-T1-E3 - 122001-SI7212DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7212DN-T1-E3
122001-SI7212DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7212DN-T1-E3 122001-SI7212DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 122001-SI7212DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 11nC @ 4.5V Maximum Rds On at Id,Vgs: 36 mOhm @ 6.8A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 122001-SI7212DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Maximum Rds On at Id,Vgs: 36 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7212DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7212DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7212DN-T1-E3
MOSFET 2N-CH 30V 4.9A PPAK 1212

MOSFET 2N-CH 30V 4.9A PPAK 1212

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8

MOSFET 30V Vds 12V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7212DN-T1-E3TR-ND 278-SI7212DN-T1-E3 122001-SI7212DN-T1-E3 SI7212DN-T1-E3 SI7212DN-T1-E3
Product Name FET, MOSFET Arrays 30V 4.9A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7212DN-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type PowerPAK® 1212-8 Dual SOT3; PowerPAK 1212-8 Dual
Polarity N-Channel N-Channel
PD 1300 milliwatts 1300 milliwatts
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