MOSFET N-CH 60V 60A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 028611-SI7164DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2830pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.25 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TSM070N07PQ56 RLG; DMT6010LPS-13; DMTH6010LPSQ-13;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-Ch 60V 23.5A PowerPAK SO8
MOSFET N-Ch 60V 23.5A PowerPAK SO8
MOSFET N-Ch 60V 23.5A PowerPAK SO8
60V 60A N-CH MOSFET 6.25mR PPAK SO-8 Product overview: SI7164DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7164DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET Transistor, N Channel, 60 A, 60 V, 0.005 ohm, 10 V, 2.5 V RoHS Compliant: Yes
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Product Range:- RoHS Compliant: Yes
N CHANNEL MOSFET; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:60A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.005OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:2.5V; POWER DISSIPATION PD:6.25W ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 60A PPAK SO-8
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | SI7164DP-T1-GE3 | 028611-SI7164DP-T1-GE3 | SI7164DP-T1-GE3DKR-ND | 7879529 | 7879529P | 278-SI7164DP-T1-GE3 | 42Y0975 | 33P5384 | 22265319 | SI7164DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7164DP-T1-GE3 | Single FETs, MOSFETs | MOSFETs | MOSFETs | 60V 60A MOSFET Transistor | Mosfet Transistor, N Channel, 60 A, 60 V, 0.005 Ohm, 10 V, 2.5 V Rohs Compliant Vishay | N Channel Mosfet, Full Reel; Channel Type Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||||
| IDSS | 60000 milliamps | 60000 milliamps | ||||||||
| PD | 6250 milliwatts | 6250 to 104000 milliwatts | 104000 milliwatts |
