Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7160DP-T1-E3 SI7160DP-T1-E3

The Si7160DP is an N-channel 30 V MOSFET with an integrated Schottky diode, designed for DC/DC conversion in notebook applications. It is packaged in a PowerPAK SO-8 surface-mount case measuring 6.15 mm by 5.15 mm with a 1.07 mm profile. The device has a maximum continuous drain current of 20 A at TC = 25 °C and 17.8 A at TA = 25 °C, with a typical on-resistance of 0.0087 Ω at VGS = 10 V and 0.010 Ω at VGS = 4.5 V. The junction-to-case thermal resistance is 3.4 °C/W, and the maximum power dissipation is 5 W at TC = 25 °C. The part is halogen-free according to IEC 61249-2-21 and operates within a junction and storage temperature range of -55 °C to 150 °C.