Manufacturer: Vishay Siliconix
Win Source Part Number: 759042-SI7157DP-T1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 6.25W, 104W
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 60A
Rds On (Maximum) at Id, Vgs: 1.6mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 625nC at 10V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 22000pF at 10V
P-Channel MOSFET, -20V, -60A, 1.25mR, PowerPAK SO-8 Product overview: SI7157DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -20V, -60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7157DP-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET P-CH 20V 60A PPAK SO-8
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
MOSFET Transistor, P Channel, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V RoHS Compliant: Yes
MOSFET, P CHANNEL, -20V, -60A, POWERPAK SO-8; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET, P CHANNEL, -20V, -60A, POWERPAK SO-8; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET P-CH 20V 60A PPAK SO-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 759042-SI7157DP-T1-GE3 | 278-SI7157DP-T1-GE3 | SI7157DP-T1-GE3TR-ND | SI7157DP-T1-GE3 | SI7157DP-T1-GE3 | 43Y2402 | 29X6571 | SI7157DP-T1-GE3 |
| Product Name | FETs - Single - SI7157DP-T1-GE3 | P-Channel -20V -60A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet Transistor, P Channel, -60 A, -20 V, 0.00125 Ohm, -10 V, -1.4 V Rohs Compliant Vishay | Mosfet, P Channel, -20V, -60A, Powerpak So-8; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| PD | 6250 to 104000 milliwatts | 104000 milliwatts | 6250 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
