P-Channel MOSFET, -30V, 50A, 5.2mR, SOIC, Surface Mount Product overview: SI7149DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -30V, 50A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -30V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7149DP-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8
MOSFET P-CH 30V 50A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 028610-SI7149DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Family Name: Si7149DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 147nC @ 10V
Max Input Capacitance: 4590pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): BSC060P03NS3E G; RS1E220ATTB1; TPCA8128;
Introduction Date: November 03, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
MOSFET 30V 50A 69W 5.2mohm @ 10V
MOSFET P-CH 30V 50A PPAK SO-8
MOSFET, P CHANNEL, -30V, -50A, PPAK SO8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7149DP-T1-GE3 | SI7149DP-T1-GE3CT-ND | SI7149DP-T1-GE3 | 028610-SI7149DP-T1-GE3 | SI7149DP-T1-GE3 | SI7149DP-T1-GE3 | 74R0230 |
| Product Name | P-Channel SMD -30V 50A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7149DP-T1-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -30V, -50A, Ppak So8; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| PD | 69000 milliwatts | 69000 milliwatts | 5200 to 69000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAKR SO-8 | TO-3 |
