P-CH MOSFET 20V 42A 1.95mR Surface Mount Product overview: SI7137DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7137DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 60A PPAK SO-8
P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028607-SI7137DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 585nC @ 10V
Max Input Capacitance: 20000pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 1.95 mOhm @ 25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
20V 60A 1.95mΩ@25A,10V 1.4V@250uA P Channel SOP-8 MOSFETs ROHS
MOSFET P-CH 20V 60A PPAK SO-8
MOSFET Transistor, P Channel, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V RoHS Compliant: Yes
MOSFET Transistor; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:104W RoHS Compliant: Yes
MOSFET Transistor, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7137DP-T1-GE3 | SI7137DP-T1-GE3 | SI7137DP-T1-GE3TR-ND | 028607-SI7137DP-T1-GE3 | SI7137DP-T1-GE3 | SI7137DP-T1-GE3 | 97W2691 | 63R6005 | 15R5175 | SI7137DP-T1-GE3 |
| Product Name | SMD 20V 42A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7137DP-T1-GE3 | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, -60 A, -20 V, 0.0016 Ohm, -10 V, -1.4 V Rohs Compliant Vishay | Mosfet Transistor; Channel Type Vishay | Mosfet Transistor, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| PD | 104000 milliwatts | 6250 milliwatts | 6250 to 104000 milliwatts | 6250 milliwatts | 104000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts |
