Vishay Intertechnology, Inc. 20V 10.2A MOSFET Transistor SI7123DN-T1-GE3

Description
MOSFET P-CH 20V 10.2A PPAK1212-8 Product overview: SI7123DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7123DN-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
MOSFET P-CH 20V 10.2A PPAK1212-8 Product overview: SI7123DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7123DN-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
20V 10.2A MOSFET Transistor
278-SI7123DN-T1-GE3
20V 10.2A MOSFET Transistor 278-SI7123DN-T1-GE3
MOSFET P-CH 20V 10.2A PPAK1212-8 Product overview: SI7123DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7123DN-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 10.2A PPAK1212-8 Product overview: SI7123DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7123DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7123DN-T1-GE3 - 028605-SI7123DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7123DN-T1-GE3
028605-SI7123DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7123DN-T1-GE3 028605-SI7123DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028605-SI7123DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 90nC @ 4.5V Max Input Capacitance: 3729pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 10.6 mOhm @ 15A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028605-SI7123DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 90nC @ 4.5V
Max Input Capacitance: 3729pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 10.6 mOhm @ 15A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI7123DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7123DN-T1-GE3
Single FETs, MOSFETs SI7123DN-T1-GE3
MOSFET P-CH 20V 10.2A PPAK1212-8

MOSFET P-CH 20V 10.2A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7123DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7123DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7123DN-T1-GE3TR-ND
P-Channel 20V 10.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 20V 10.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7123DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7123DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7123DN-T1-GE3CT-ND
P-Channel 20V 10.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 20V 10.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7123DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7123DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7123DN-T1-GE3
MOSFET P-CH 20V 10.2A PPAK1212-8

MOSFET P-CH 20V 10.2A PPAK1212-8

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 278-SI7123DN-T1-GE3 028605-SI7123DN-T1-GE3 SI7123DN-T1-GE3 SI7123DN-T1-GE3TR-ND SI7123DN-T1-GE3
Product Name 20V 10.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7123DN-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) SOT3; PowerPAK 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAKR 1212-8
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT)
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