P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-CH MOSFET -30V, 10.6A, 18mR, SMT Product overview: SI7121DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 10.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 10.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7121DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 16A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 028604-SI7121DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7121DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1960pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): MDV3605URH; BSZ180P03NS3EGXT; BSZ180P03NS3GXT;
Introduction Date: March 09, 2005
ECCN: EAR99
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
MOSFET, P CHANNEL, -30V, -16A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
P CH MOSFET, -30V, 16A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET 30V 16A 52W 1.8mohm @ 10V
MOSFET P-CH 30V 16A PPAK1212-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7121DN-T1-GE3CT-ND | 278-SI7121DN-T1-GE3 | SI7121DN-T1-GE3 | 028604-SI7121DN-T1-GE3 | 8181380P | 8181380 | 11X2607 | 16P3823 | SI7121DN-T1-GE3 | SI7121DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | -30V 10.6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121DN-T1-GE3 | MOSFETs | MOSFETs | Mosfet, P Channel, -30V, -16A, Powerpak-8; Channel Type Vishay | P Ch Mosfet, -30V, 16A, Powerpak, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAK 1212 | Powerpak 1212 | TO-3 | TO-3 | 65 nC @ 10 V | ||
| PD | 52000 milliwatts | 3700 milliwatts | 3700 to 52000 milliwatts | |||||||
| TJ | -55 C (-67 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |