Vishay Precision Group Single FETs, MOSFETs SI7121DN-T1-GE3

Description
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7121DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7121DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7121DN-T1-GE3CT-ND
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7121DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7121DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7121DN-T1-GE3DKR-ND
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7121DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7121DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7121DN-T1-GE3TR-ND
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
-30V 10.6A MOSFET Transistor
278-SI7121DN-T1-GE3
-30V 10.6A MOSFET Transistor 278-SI7121DN-T1-GE3
P-CH MOSFET -30V, 10.6A, 18mR, SMT Product overview: SI7121DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 10.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 10.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7121DN-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET -30V, 10.6A, 18mR, SMT Product overview: SI7121DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 10.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 10.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7121DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7121DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7121DN-T1-GE3
Single FETs, MOSFETs SI7121DN-T1-GE3
MOSFET P-CH 30V 16A PPAK1212-8

MOSFET P-CH 30V 16A PPAK1212-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121DN-T1-GE3 - 028604-SI7121DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121DN-T1-GE3
028604-SI7121DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121DN-T1-GE3 028604-SI7121DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028604-SI7121DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Family Name: Si7121DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 1960pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): MDV3605URH; BSZ180P03NS3EGXT; BSZ180P03NS3GXT; Introduction Date: March 09, 2005 ECCN: EAR99 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028604-SI7121DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7121DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1960pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): MDV3605URH; BSZ180P03NS3EGXT; BSZ180P03NS3GXT;
Introduction Date: March 09, 2005
ECCN: EAR99
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFETs - 8181380P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8181380P
MOSFETs 8181380P
Trans MOSFET P-CH 30V 10.6An

Trans MOSFET P-CH 30V 10.6An

Supplier's Site
MOSFETs - 8181380 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8181380
MOSFETs 8181380
Trans MOSFET P-CH 30V 10.6An

Trans MOSFET P-CH 30V 10.6An

Supplier's Site
MOSFETs - 1708393 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1708393
MOSFETs 1708393
Trans MOSFET P-CH 30V 10.6An

Trans MOSFET P-CH 30V 10.6An

Supplier's Site
Mosfet, P Channel, -30V, -16A, Powerpak-8; Channel Type Vishay - 11X2607 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -16A, Powerpak-8; Channel Type Vishay
11X2607
Mosfet, P Channel, -30V, -16A, Powerpak-8; Channel Type Vishay 11X2607
MOSFET, P CHANNEL, -30V, -16A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -16A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
P Ch Mosfet, -30V, 16A, Powerpak, Full Reel; Channel Type Vishay - 16P3823 - Newark, An Avnet Company
Chicago, IL, United States
P Ch Mosfet, -30V, 16A, Powerpak, Full Reel; Channel Type Vishay
16P3823
P Ch Mosfet, -30V, 16A, Powerpak, Full Reel; Channel Type Vishay 16P3823
P CH MOSFET, -30V, 16A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CH MOSFET, -30V, 16A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 16A 52W 1.8mohm @ 10V

MOSFET 30V 16A 52W 1.8mohm @ 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7121DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7121DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7121DN-T1-GE3
MOSFET P-CH 30V 16A PPAK1212-8

MOSFET P-CH 30V 16A PPAK1212-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7121DN-T1-GE3CT-ND 278-SI7121DN-T1-GE3 SI7121DN-T1-GE3 028604-SI7121DN-T1-GE3 8181380P 8181380 11X2607 16P3823 SI7121DN-T1-GE3 SI7121DN-T1-GE3
Product Name Single FETs, MOSFETs -30V 10.6A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121DN-T1-GE3 MOSFETs MOSFETs Mosfet, P Channel, -30V, -16A, Powerpak-8; Channel Type Vishay P Ch Mosfet, -30V, 16A, Powerpak, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type PowerPAK® 1212-8 PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 PowerPAK 1212 Powerpak 1212 TO-3 TO-3 65 nC @ 10 V
PD 52000 milliwatts 3700 milliwatts 3700 to 52000 milliwatts
TJ -55 C (-67 F) -50 to 150 C (-58 to 302 F) -50 to 150 C (-58 to 302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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