Manufacturer: Vishay
Win Source Part Number: 028604-SI7121DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7121DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1960pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): MDV3605URH; BSZ180P03NS3EGXT; BSZ180P03NS3GXT;
Introduction Date: March 09, 2005
ECCN: EAR99
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 30V 16A PPAK1212-8
MOSFET, P CHANNEL, -30V, -16A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
P CH MOSFET, -30V, 16A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET P-CH 30V 16A PPAK1212-8
MOSFET 30V 16A 52W 1.8mohm @ 10V
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028604-SI7121DN-T1-GE3 | 8181380P | 8181380 | SI7121DN-T1-GE3CT-ND | SI7121DN-T1-GE3 | 11X2607 | 16P3823 | SI7121DN-T1-GE3 | SI7121DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121DN-T1-GE3 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P Channel, -30V, -16A, Powerpak-8; Channel Type Vishay | P Ch Mosfet, -30V, 16A, Powerpak, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 3700 to 52000 milliwatts | 3700 milliwatts | |||||||
| TJ | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | |||||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK 1212 | Powerpak 1212 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | 65 nC @ 10 V |
