Vishay Precision Group Single FETs, MOSFETs SI7121ADN-T1-GE3

Description
MOSFET P-CH 30V 12A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET P-CH 30V 12A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7121ADN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7121ADN-T1-GE3
Single FETs, MOSFETs SI7121ADN-T1-GE3
MOSFET P-CH 30V 12A PPAK1212-8

MOSFET P-CH 30V 12A PPAK1212-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121ADN-T1-GE3 - 1096134-SI7121ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121ADN-T1-GE3
1096134-SI7121ADN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121ADN-T1-GE3 1096134-SI7121ADN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096134-SI7121ADN-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1870pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 15 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096134-SI7121ADN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1870pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 15 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
P-Channel 18A 30V 0.015ohm MOSFET Transistor
2088-SI7121ADN-T1-GE3
P-Channel 18A 30V 0.015ohm MOSFET Transistor 2088-SI7121ADN-T1-GE3
Power Field-Effect Transistor, 18A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SI7121ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 18A, 30V, 0.015ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 18A, 30V, 0.015ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7121ADN-T1-GE 3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 18A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SI7121ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 18A, 30V, 0.015ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 18A, 30V, 0.015ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7121ADN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7121ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7121ADN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7121ADN-T1-GE3DKR-ND
P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7121ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7121ADN-T1-GE3CT-ND
Single FETs, MOSFETs SI7121ADN-T1-GE3CT-ND
P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7121ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7121ADN-T1-GE3TR-ND
Single FETs, MOSFETs SI7121ADN-T1-GE3TR-ND
P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
MOSFET P-CH 30V D-S PPAK 1212-8 - 880-SI7121ADN-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V D-S PPAK 1212-8
880-SI7121ADN-T1-GE3
MOSFET P-CH 30V D-S PPAK 1212-8 880-SI7121ADN-T1-GE3
MOSFET P-CH 30V D-S PPAK 1212-8

MOSFET P-CH 30V D-S PPAK 1212-8

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7121ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7121ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7121ADN-T1-GE3
MOSFET P-CH 30V 12A PPAK1212-8

MOSFET P-CH 30V 12A PPAK1212-8

Supplier's Site
Mosfet, P Channel, -30V, -18A, Powerpak1212-8; Channel Type Vishay - 38X4916 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -18A, Powerpak1212-8; Channel Type Vishay
38X4916
Mosfet, P Channel, -30V, -18A, Powerpak1212-8; Channel Type Vishay 38X4916
MOSFET, P CHANNEL, -30V, -18A, POWERPAK1212-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5VRoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -18A, POWERPAK1212-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5VRoHS Compliant: Yes

Supplier's Site
Mosfet, P Channel, -30V, -18A, Powerpak1212-8; Channel Type Vishay - 38X4917 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -18A, Powerpak1212-8; Channel Type Vishay
38X4917
Mosfet, P Channel, -30V, -18A, Powerpak1212-8; Channel Type Vishay 38X4917
MOSFET, P CHANNEL, -30V, -18A, POWERPAK1212-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5VRoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -18A, POWERPAK1212-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5VRoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, 30V, 18A, Powerpak 1212 Rohs Compliant Vishay - 57AJ0457 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 18A, Powerpak 1212 Rohs Compliant Vishay
57AJ0457
Mosfet, P-Ch, 30V, 18A, Powerpak 1212 Rohs Compliant Vishay 57AJ0457
MOSFET, P-CH, 30V, 18A, POWERPAK 1212 ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 18A, POWERPAK 1212 ROHS COMPLIANT: YES

Supplier's Site
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8

MOSFET -30V Vds 25V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7121ADN-T1-GE3 1096134-SI7121ADN-T1-GE3 2088-SI7121ADN-T1-GE3 SI7121ADN-T1-GE3DKR-ND 880-SI7121ADN-T1-GE3 SI7121ADN-T1-GE3 38X4916 57AJ0457 SI7121ADN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7121ADN-T1-GE3 P-Channel 18A 30V 0.015ohm MOSFET Transistor Single FETs, MOSFETs MOSFET P-CH 30V D-S PPAK 1212-8 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Channel, -30V, -18A, Powerpak1212-8; Channel Type Vishay Mosfet, P-Ch, 30V, 18A, Powerpak 1212 Rohs Compliant Vishay MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts -30 volts
IDSS 12000 milliamps 18000 milliamps
PD 3500 milliwatts 3500 to 27800 milliwatts 27800 milliwatts 3500 milliwatts
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