Vishay Precision Group Single FETs, MOSFETs SI7119DN-T1-GE3

Description
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7119DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7119DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7119DN-T1-GE3CT-ND
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7119DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7119DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7119DN-T1-GE3DKR-ND
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7119DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7119DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7119DN-T1-GE3TR-ND
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7119DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7119DN-T1-GE3
Single FETs, MOSFETs SI7119DN-T1-GE3
MOSFET P-CH 200V 3.8A PPAK1212-8

MOSFET P-CH 200V 3.8A PPAK1212-8

Supplier's Site Datasheet
MOSFETs - 1807820 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807820
MOSFETs 1807820
P-Ch PowerPAK 1212-8 200V 1050mohm @ 10

P-Ch PowerPAK 1212-8 200V 1050mohm @ 10

Supplier's Site
MOSFETs - 1807820P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807820P
MOSFETs 1807820P
P-Ch PowerPAK 1212-8 200V 1050mohm @ 10

P-Ch PowerPAK 1212-8 200V 1050mohm @ 10

Supplier's Site
MOSFETs - 1807307 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807307
MOSFETs 1807307
P-Ch PowerPAK 1212-8 200V 1050mohm @ 10

P-Ch PowerPAK 1212-8 200V 1050mohm @ 10

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7119DN-T1-GE3 - 1096132-SI7119DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7119DN-T1-GE3
1096132-SI7119DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7119DN-T1-GE3 1096132-SI7119DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096132-SI7119DN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Family Name: Si7119DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 666pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1A, 10V Introduction Date: November 30, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096132-SI7119DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7119DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 666pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1A, 10V
Introduction Date: November 30, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
-200V 1.2A MOSFET Transistor
278-SI7119DN-T1-GE3
-200V 1.2A MOSFET Transistor 278-SI7119DN-T1-GE3
P-CH MOSFET -200V, 1.2A, 1.05R, SMT Product overview: SI7119DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -200V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7119DN-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET -200V, 1.2A, 1.05R, SMT Product overview: SI7119DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -200V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7119DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -200V Vds 20V Vgs PowerPAK 1212-8

MOSFET -200V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7119DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7119DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7119DN-T1-GE3
MOSFET P-CH 200V 3.8A PPAK1212-8

MOSFET P-CH 200V 3.8A PPAK1212-8

Supplier's Site
Mosfet, P Ch, -200V, 3.8A, Powerpak; Transistor Polarity Vishay - 51AC3201 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Ch, -200V, 3.8A, Powerpak; Transistor Polarity Vishay
51AC3201
Mosfet, P Ch, -200V, 3.8A, Powerpak; Transistor Polarity Vishay 51AC3201
MOSFET, P CH, -200V, 3.8A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

MOSFET, P CH, -200V, 3.8A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
P Ch Mosfet, -200V, 3.8A, Powerpak; Channel Type Vishay - 33P5381 - Newark, An Avnet Company
Chicago, IL, United States
P Ch Mosfet, -200V, 3.8A, Powerpak; Channel Type Vishay
33P5381
P Ch Mosfet, -200V, 3.8A, Powerpak; Channel Type Vishay 33P5381
P CH MOSFET, -200V, 3.8A, POWERPAK; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CH MOSFET, -200V, 3.8A, POWERPAK; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) RS Components, Ltd. Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7119DN-T1-GE3CT-ND SI7119DN-T1-GE3 1807820 1096132-SI7119DN-T1-GE3 278-SI7119DN-T1-GE3 SI7119DN-T1-GE3 SI7119DN-T1-GE3 51AC3201 33P5381
Product Name Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7119DN-T1-GE3 -200V 1.2A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Ch, -200V, 3.8A, Powerpak; Transistor Polarity Vishay P Ch Mosfet, -200V, 3.8A, Powerpak; Channel Type Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK 1212-8 SOT3; PowerPAK 1212-8 PowerPAKR 1212-8 TO-3 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 3800 milliamps 3800 milliamps 3800 milliamps
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