P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 200V 3.8A PPAK1212-8
P-Ch PowerPAK 1212-8 200V 1050mohm @ 10
P-Ch PowerPAK 1212-8 200V 1050mohm @ 10
P-Ch PowerPAK 1212-8 200V 1050mohm @ 10
Manufacturer: Vishay
Win Source Part Number: 1096132-SI7119DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7119DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 666pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1A, 10V
Introduction Date: November 30, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
P-CH MOSFET -200V, 1.2A, 1.05R, SMT Product overview: SI7119DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -200V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7119DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
MOSFET P-CH 200V 3.8A PPAK1212-8
MOSFET, P CH, -200V, 3.8A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes
P CH MOSFET, -200V, 3.8A, POWERPAK; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7119DN-T1-GE3CT-ND | SI7119DN-T1-GE3 | 1807820 | 1096132-SI7119DN-T1-GE3 | 278-SI7119DN-T1-GE3 | SI7119DN-T1-GE3 | SI7119DN-T1-GE3 | 51AC3201 | 33P5381 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7119DN-T1-GE3 | -200V 1.2A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Ch, -200V, 3.8A, Powerpak; Transistor Polarity Vishay | P Ch Mosfet, -200V, 3.8A, Powerpak; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAKR 1212-8 | TO-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 200 volts | 200 volts | |||||||
| IDSS | 3800 milliamps | 3800 milliamps | 3800 milliamps |