The Si7119DN is a P-channel 200-V MOSFET in a PowerPAK 1212-8 surface-mount package measuring 3.30 mm × 3.30 mm. It has a drain-source on-state resistance of 10.6 Ω at VGS = -10 V and a continuous drain current of -3.8 A at TC = 25 °C. The device supports a maximum junction temperature of 150 °C, with a thermal resistance of 2.9 °C/W from junction to case. It is halogen-free according to IEC 61249-2-21 and rated for 100% UIS and Rg testing. Suitable for active clamp DC/DC converters, it has a total gate charge of 10.6 nC and a drain-source body diode with reverse recovery charge up to 270 nC.
Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:52W; No. of Pins:8Pins RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 16AC0263 |
| Product Name | Channel Type Vishay |
| Package Type | TO-3 |
