Manufacturer: Vishay
Win Source Part Number: 064548-SI7119DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 666pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
P-CH MOSFET 200V 1.2A 1.05R SMT Product overview: SI7119DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7119DN-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 200V 3.8A PPAK1212-8
MOSFET P-CH 200V 3.8A PPAK1212-8
MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
MOSFET, P CHANNEL, -200V, -3.8A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
P CH MOSFET, -200V, 3.8A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064548-SI7119DN-T1-E3 | 278-SI7119DN-T1-E3 | SI7119DN-T1-E3DKR-ND | SI7119DN-T1-E3 | SI7119DN-T1-E3 | SI7119DN-T1-E3 | 09X6443 | 75M5535 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7119DN-T1-E3 | 200V 1.2A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P Channel, -200V, -3.8A, Powerpak-8; Channel Type Vishay | P Ch Mosfet, -200V, 3.8A, Powerpak, Full Reel; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| PD | 3700 to 52000 milliwatts | 52000 milliwatts | 3700 milliwatts | |||||
| TJ | -50 to 150 C (-58 to 302 F) | -50 C (-58 F) | -50 to 150 C (-58 to 302 F) |
