Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7117DN-T1-E3

P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

MOSFET P-CH 150V 2.17A PPAK

P-CH MOSFET 150V 1.1A 1.2R SMT Product overview: SI7117DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 1.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7117DN-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 130572-SI7117DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 2.17A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs