Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7117DN-T1-E3

Description
P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - SI7117DN-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7117DN-T1-E3CT-ND
Single FETs, MOSFETs SI7117DN-T1-E3CT-ND
P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7117DN-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7117DN-T1-E3TR-ND
Single FETs, MOSFETs SI7117DN-T1-E3TR-ND
P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7117DN-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7117DN-T1-E3DKR-ND
Single FETs, MOSFETs SI7117DN-T1-E3DKR-ND
P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7117DN-T1-E3 - 130572-SI7117DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7117DN-T1-E3
130572-SI7117DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7117DN-T1-E3 130572-SI7117DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 130572-SI7117DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 2.17A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 130572-SI7117DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 2.17A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI7117DN-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7117DN-T1-E3
Single FETs, MOSFETs SI7117DN-T1-E3
MOSFET P-CH 150V 2.17A PPAK

MOSFET P-CH 150V 2.17A PPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8

MOSFET -150V Vds 20V Vgs PowerPAK 1212-8

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7117DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7117DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7117DN-T1-E3
MOSFET P-CH 150V 2.17A PPAK

MOSFET P-CH 150V 2.17A PPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7117DN-T1-E3CT-ND 130572-SI7117DN-T1-E3 SI7117DN-T1-E3 SI7117DN-T1-E3 SI7117DN-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7117DN-T1-E3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 PowerPAK® 1212-8 PowerPAKR 1212-8
V(BR)DSS 150 volts 150 volts
PD 3200 to 12500 milliwatts 3200 milliwatts
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