Vishay Precision Group Single FETs, MOSFETs SI7116DN-T1-GE3

Description
MOSFET N-CH 40V 10.5A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET N-CH 40V 10.5A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7116DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7116DN-T1-GE3
Single FETs, MOSFETs SI7116DN-T1-GE3
MOSFET N-CH 40V 10.5A PPAK1212-8

MOSFET N-CH 40V 10.5A PPAK1212-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7116DN-T1-GE3 - 139888-SI7116DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7116DN-T1-GE3
139888-SI7116DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7116DN-T1-GE3 139888-SI7116DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 139888-SI7116DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 10.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.8 mOhm @ 16.4A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 139888-SI7116DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 10.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.8 mOhm @ 16.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI7116DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7116DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7116DN-T1-GE3DKR-ND
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7116DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7116DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7116DN-T1-GE3TR-ND
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7116DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7116DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7116DN-T1-GE3CT-ND
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
N Channel Mosfet; Channel Type Vishay - 84R8072 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet; Channel Type Vishay
84R8072
N Channel Mosfet; Channel Type Vishay 84R8072
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:1.5W RoHS Compliant: Yes

N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:1.5W RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, Full Reel; Channel Type Vishay - 33P5379 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, Full Reel; Channel Type Vishay
33P5379
N Channel Mosfet, Full Reel; Channel Type Vishay 33P5379
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7116DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7116DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7116DN-T1-GE3
MOSFET N-CH 40V 10.5A PPAK1212-8

MOSFET N-CH 40V 10.5A PPAK1212-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7116DN-T1-GE3 139888-SI7116DN-T1-GE3 SI7116DN-T1-GE3DKR-ND 84R8072 33P5379 SI7116DN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7116DN-T1-GE3 Single FETs, MOSFETs N Channel Mosfet; Channel Type Vishay N Channel Mosfet, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 10500 milliamps 10500 milliamps 10500 milliamps
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