Vishay Precision Group Single FETs, MOSFETs SI7115DN-T1-GE3

Description
MOSFET P-CH 150V 8.9A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET P-CH 150V 8.9A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7115DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7115DN-T1-GE3
Single FETs, MOSFETs SI7115DN-T1-GE3
MOSFET P-CH 150V 8.9A PPAK1212-8

MOSFET P-CH 150V 8.9A PPAK1212-8

Supplier's Site Datasheet
Singapore
-150V 2.3A MOSFET Transistor
278-SI7115DN-T1-GE3
-150V 2.3A MOSFET Transistor 278-SI7115DN-T1-GE3
P-CH MOSFET, -150V, 2.3A, 295mR, SMT Product overview: SI7115DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -150V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -150V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7115DN-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET, -150V, 2.3A, 295mR, SMT Product overview: SI7115DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -150V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -150V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7115DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7115DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7115DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7115DN-T1-GE3CT-ND
P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7115DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7115DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7115DN-T1-GE3TR-ND
P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7115DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7115DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7115DN-T1-GE3DKR-ND
P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-GE3 - 028602-SI7115DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-GE3
028602-SI7115DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-GE3 028602-SI7115DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028602-SI7115DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Family Name: SI7115DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 8.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1190pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): FDMC86262P; Introduction Date: August 28, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028602-SI7115DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: SI7115DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 8.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1190pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): FDMC86262P;
Introduction Date: August 28, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.245 Ohm, -10 V, -2 V Rohs Compliant Vishay - 97W2690 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.245 Ohm, -10 V, -2 V Rohs Compliant Vishay
97W2690
Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.245 Ohm, -10 V, -2 V Rohs Compliant Vishay 97W2690
MOSFET Transistor, P Channel, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8

MOSFET -150V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7115DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7115DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7115DN-T1-GE3
MOSFET P-CH 150V 8.9A PPAK1212-8

MOSFET P-CH 150V 8.9A PPAK1212-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7115DN-T1-GE3 278-SI7115DN-T1-GE3 SI7115DN-T1-GE3CT-ND 028602-SI7115DN-T1-GE3 97W2690 SI7115DN-T1-GE3 SI7115DN-T1-GE3
Product Name Single FETs, MOSFETs -150V 2.3A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-GE3 Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.245 Ohm, -10 V, -2 V Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts 150 volts
IDSS 8900 milliamps
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