MOSFET P-CH 150V 8.9A PPAK1212-8
P-CH MOSFET, -150V, 2.3A, 295mR, SMT Product overview: SI7115DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -150V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -150V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7115DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028602-SI7115DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: SI7115DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 8.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1190pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): FDMC86262P;
Introduction Date: August 28, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 150V 8.9A PPAK1212-8
MOSFET Transistor, P Channel, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V RoHS Compliant: Yes
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7115DN-T1-GE3 | 278-SI7115DN-T1-GE3 | 028602-SI7115DN-T1-GE3 | SI7115DN-T1-GE3CT-ND | SI7115DN-T1-GE3 | 97W2690 | SI7115DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | -150V 2.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.245 Ohm, -10 V, -2 V Rohs Compliant Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | 150 volts | |||||
| IDSS | 8900 milliamps |
