Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-E3 SI7115DN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096131-SI7115DN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 8.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1190pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096131-SI7115DN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 8.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1190pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-E3 - 1096131-SI7115DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-E3
1096131-SI7115DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-E3 1096131-SI7115DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096131-SI7115DN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 8.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1190pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096131-SI7115DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 8.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1190pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
SMD 150V 2.3A MOSFET Transistor
278-SI7115DN-T1-E3
SMD 150V 2.3A MOSFET Transistor 278-SI7115DN-T1-E3
P-CH MOSFET 150V 2.3A 295mR Surface Mount Product overview: SI7115DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 150V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7115DN-T1-E3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 150V 2.3A 295mR Surface Mount Product overview: SI7115DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 150V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7115DN-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7115DN-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7115DN-T1-E3CT-ND
Single FETs, MOSFETs SI7115DN-T1-E3CT-ND
P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7115DN-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7115DN-T1-E3TR-ND
Single FETs, MOSFETs SI7115DN-T1-E3TR-ND
P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7115DN-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7115DN-T1-E3DKR-ND
Single FETs, MOSFETs SI7115DN-T1-E3DKR-ND
P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7115DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7115DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7115DN-T1-E3
MOSFET P-CH 150V 8.9A PPAK1212-8

MOSFET P-CH 150V 8.9A PPAK1212-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8

MOSFET -150V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096131-SI7115DN-T1-E3 278-SI7115DN-T1-E3 SI7115DN-T1-E3CT-ND SI7115DN-T1-E3 SI7115DN-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7115DN-T1-E3 SMD 150V 2.3A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 150 volts
PD 3700 to 52000 milliwatts 52000 milliwatts
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