Manufacturer: Vishay
Win Source Part Number: 028600-SI7114ADN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Family Name: Si7114ADN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): NTTFS4939NTWG; NTTFS4945NTAG; IRFHM8334TRPBF; TPCC8008(TE12L,Q);
Introduction Date: November 03, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel MOSFET, 30V, 35A, 7.5mR Rds(on), Surface Mount Product overview: SI7114ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7114ADN-T1-GE3
N CHANNEL MOSFET, 30V, 11.7A, POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:3.7W RoHS Compliant: Yes
MOSFET, N-CH, 30V, 18.3A, POWERPAK 1212 ROHS COMPLIANT: YES
MOSFET N-CH 30V 35A PPAK 1212-8
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028600-SI7114ADN-T1-GE3 | SI7114ADN-T1-GE3TR-ND | 278-SI7114ADN-T1-GE3 | 16P3822 | 57AJ0456 | SI7114ADN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7114ADN-T1-GE3 | Single FETs, MOSFETs | N-Channel SMD 30V 35A MOSFET Transistor | N Channel Mosfet, 30V, 11.7A, Powerpak, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 30V, 18.3A, Powerpak 1212 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | |||||
| PD | 3700 to 39000 milliwatts | 3700 milliwatts | 3700 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |