Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7114ADN-T1-GE3 SI7114ADN-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028600-SI7114ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Family Name: Si7114ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): NTTFS4939NTWG; NTTFS4945NTAG; IRFHM8334TRPBF; TPCC8008(TE12L,Q); Introduction Date: November 03, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028600-SI7114ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Family Name: Si7114ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): NTTFS4939NTWG; NTTFS4945NTAG; IRFHM8334TRPBF; TPCC8008(TE12L,Q); Introduction Date: November 03, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7114ADN-T1-GE3 - 028600-SI7114ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7114ADN-T1-GE3
028600-SI7114ADN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7114ADN-T1-GE3 028600-SI7114ADN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028600-SI7114ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Family Name: Si7114ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): NTTFS4939NTWG; NTTFS4945NTAG; IRFHM8334TRPBF; TPCC8008(TE12L,Q); Introduction Date: November 03, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028600-SI7114ADN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Family Name: Si7114ADN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): NTTFS4939NTWG; NTTFS4945NTAG; IRFHM8334TRPBF; TPCC8008(TE12L,Q);
Introduction Date: November 03, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7114ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7114ADN-T1-GE3TR-ND
Single FETs, MOSFETs SI7114ADN-T1-GE3TR-ND
N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7114ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7114ADN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7114ADN-T1-GE3DKR-ND
N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7114ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7114ADN-T1-GE3CT-ND
Single FETs, MOSFETs SI7114ADN-T1-GE3CT-ND
N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
N-Channel SMD 30V 35A MOSFET Transistor
278-SI7114ADN-T1-GE3
N-Channel SMD 30V 35A MOSFET Transistor 278-SI7114ADN-T1-GE3
N-Channel MOSFET, 30V, 35A, 7.5mR Rds(on), Surface Mount Product overview: SI7114ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7114ADN-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 30V, 35A, 7.5mR Rds(on), Surface Mount Product overview: SI7114ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7114ADN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
N Channel Mosfet, 30V, 11.7A, Powerpak, Full Reel; Channel Type Vishay - 16P3822 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 11.7A, Powerpak, Full Reel; Channel Type Vishay
16P3822
N Channel Mosfet, 30V, 11.7A, Powerpak, Full Reel; Channel Type Vishay 16P3822
N CHANNEL MOSFET, 30V, 11.7A, POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:3.7W RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 11.7A, POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:3.7W RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 30V, 18.3A, Powerpak 1212 Rohs Compliant Vishay - 57AJ0456 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 18.3A, Powerpak 1212 Rohs Compliant Vishay
57AJ0456
Mosfet, N-Ch, 30V, 18.3A, Powerpak 1212 Rohs Compliant Vishay 57AJ0456
MOSFET, N-CH, 30V, 18.3A, POWERPAK 1212 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 18.3A, POWERPAK 1212 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7114ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7114ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7114ADN-T1-GE3
MOSFET N-CH 30V 35A PPAK 1212-8

MOSFET N-CH 30V 35A PPAK 1212-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028600-SI7114ADN-T1-GE3 SI7114ADN-T1-GE3TR-ND 278-SI7114ADN-T1-GE3 16P3822 57AJ0456 SI7114ADN-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7114ADN-T1-GE3 Single FETs, MOSFETs N-Channel SMD 30V 35A MOSFET Transistor N Channel Mosfet, 30V, 11.7A, Powerpak, Full Reel; Channel Type Vishay Mosfet, N-Ch, 30V, 18.3A, Powerpak 1212 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 3700 to 39000 milliwatts 3700 milliwatts 3700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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