P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 028599-SI7113DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7113DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.2A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 1480pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 134 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): FDMC86139P;
Introduction Date: October 25, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET P-CH 100V 13.2A PPAK
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
MOSFET, P-CH, 100V, 13.2A, 150DEG C, 52W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, P CHANNEL, -100V, -13.2A, POWERPAK 1212-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; On Resistance Rds(on):0.119ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET P-CH 100V 13.2A PPAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7113DN-T1-GE3CT-ND | 028599-SI7113DN-T1-GE3 | SI7113DN-T1-GE3 | SI7113DN-T1-GE3 | 97W2688 | 69W7263 | SI7113DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7113DN-T1-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 100V, 13.2A, 150Deg C, 52W; Channel Type Vishay | Mosfet, P Channel, -100V, -13.2A, Powerpak 1212-8; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 | |
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 3700 to 52000 milliwatts | 3700 milliwatts | |||||
| TJ | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) |
