The SI7113DN-T1-E3 is a P-Channel MOSFET designed for RF applications, featuring a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 13.2A at a case temperature of 25¬8C. It has a low on-state resistance (R_DS(on)) of 134 mOc at a gate-source voltage (V_GS) of -10V and a drain current of -4A. The device operates within a temperature range of -50¬8C to 150¬8C and has a maximum power dissipation of 52W at a case temperature of 25¬8C. The MOSFET is packaged in a PowerPAK 1212-8 format, which offers low thermal resistance and a compact size. It has a maximum gate-source voltage of ¬±20V and a total gate charge (Q_g) of 55nC at 10V. The device is halogen-free and compliant with RoHS standards. It is suitable for applications such as active clamp in intermediate DC/DC power supplies. The part is actively produced and has a balanced supply and demand status in the market.
MOSFET P-CH 100V 13.2A PPAK
P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 028598-SI7113DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7113DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.2A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 1480pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 134 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): FDMC86139P;
Introduction Date: October 25, 2006
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
P-CH MOSFET 100V 3.5A 134mR SMT PowerPAK Product overview: SI7113DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7113DN-T1-E3 can be used for catalog matching and distributor lookup.
P CHANNEL MOSFET, -100V, 13.2A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:3.7W RoHS Compliant: Yes
MOSFET P-CH 100V 13.2A PPAK
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7113DN-T1-E3 | SI7113DN-T1-E3DKR-ND | 028598-SI7113DN-T1-E3 | 278-SI7113DN-T1-E3 | 22M8861 | SI7113DN-T1-E3 | SI7113DN-T1-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7113DN-T1-E3 | 100V 3.5A MOSFET Transistor | P Channel Mosfet, -100V, 13.2A, Powerpak, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 13200 milliamps | 13200 milliamps |
