Manufacturer: Vishay
Win Source Part Number: 028596-SI7110DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 13.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.3 mOhm @ 21.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
N-CH MOSFET 20V 13.5A 5.3mR TrenchFET® PowerPAK Product overview: SI7110DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 13.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 13.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7110DN-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 20V 13.5A PPAK1212-8
MOSFET N-CH 20V 13.5A 1212-8
N CHANNEL MOSFET, 21.1V, 20A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:21.1V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET N-CH 20V 13.5A PPAK1212-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028596-SI7110DN-T1-E3 | 278-SI7110DN-T1-E3 | SI7110DN-T1-E3TR-ND | SI7110DN-T1-E3 | 880-SI7110DN-T1-E3 | SI7110DN-T1-E3 | 51K6980 | SI7110DN-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7110DN-T1-E3 | 20V 13.5A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET N-CH 20V 13.5A 1212-8 | MOSFET | N Channel Mosfet, 21.1V, 20A, Powerpak; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | PowerPAKR 1212-8 |
