Vishay Precision Group Single FETs, MOSFETs SI7108DN-T1-GE3

N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

20V 14A N-CH MOSFET 4.9mR SOT23-3 Surface Mount Product overview: SI7108DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 14A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 14A, SOT23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7108DN-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 14A PPAK1212-8

Manufacturer: Vishay
Win Source Part Number: 028595-SI7108DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 30nC @ 4.5V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 4.9 mOhm @ 22A, 10V
Alternative Parts (Cross-Reference): AOL1404; Si7108DN-T1-E3; SI7108DN-T1-GE3; SI7108DN-T1;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance