Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7107DN-T1-GE3

Description
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

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Single FETs, MOSFETs - SI7107DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7107DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7107DN-T1-GE3TR-ND
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-GE3 - 139049-SI7107DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-GE3
139049-SI7107DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-GE3 139049-SI7107DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 139049-SI7107DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9.8A (Ta) Gate-Source Threshold Voltage: 1V @ 450μA Max Gate Charge: 44nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 10.8 mOhm @ 15.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 139049-SI7107DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 450μA
Max Gate Charge: 44nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 10.8 mOhm @ 15.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7107DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7107DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7107DN-T1-GE3
MOSFET P-CH 20V 9.8A PPAK1212-8

MOSFET P-CH 20V 9.8A PPAK1212-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7107DN-T1-GE3TR-ND 139049-SI7107DN-T1-GE3 SI7107DN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 PowerPAKR 1212-8
V(BR)DSS 20 volts
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