Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7107DN-T1-E3

Description
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7107DN-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7107DN-T1-E3TR-ND
Single FETs, MOSFETs SI7107DN-T1-E3TR-ND
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
20V 9.8A MOSFET Transistor
278-SI7107DN-T1-E3
20V 9.8A MOSFET Transistor 278-SI7107DN-T1-E3
MOSFET P-CH 20V 9.8A PPAK1212-8 Product overview: SI7107DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 9.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7107DN-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 9.8A PPAK1212-8 Product overview: SI7107DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 9.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7107DN-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-E3 - 064547-SI7107DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-E3
064547-SI7107DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-E3 064547-SI7107DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 064547-SI7107DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9.8A (Ta) Gate-Source Threshold Voltage: 1V @ 450μA Max Gate Charge: 44nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 10.8 mOhm @ 15.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 064547-SI7107DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 450μA
Max Gate Charge: 44nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 10.8 mOhm @ 15.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7107DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7107DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7107DN-T1-E3
MOSFET P-CH 20V 9.8A PPAK1212-8

MOSFET P-CH 20V 9.8A PPAK1212-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7107DN-T1-E3TR-ND 278-SI7107DN-T1-E3 064547-SI7107DN-T1-E3 SI7107DN-T1-E3
Product Name Single FETs, MOSFETs 20V 9.8A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7107DN-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8 Tape & Reel (TR) SOT3; PowerPAK 1212-8
PD 1500 milliwatts 1500 milliwatts
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