Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7106DN-T1-E3 SI7106DN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028592-SI7106DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 27nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 6.2 mOhm @ 19.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7106DN-T1-E3 - 028592-SI7106DN-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SI7106DN-T1-E3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI7106DN-T1-E3CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI7106DN-T1-E3DKR-ND - DigiKey
    DigiKey
  • MOSFET N-CH 20V 12.5A 1212-8 - 880-SI7106DN-T1-E3 - Utmel Electronic Limited
    Utmel Electronic Limited
  • N Channel Mosfet, 20V, 19.5A, Powerpak; Channel Type Vishay - 51K6978 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7106DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028592-SI7106DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 27nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 6.2 mOhm @ 19.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7106DN-T1-E3 - 028592-SI7106DN-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7106DN-T1-E3
028592-SI7106DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7106DN-T1-E3 028592-SI7106DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 028592-SI7106DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 27nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 6.2 mOhm @ 19.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028592-SI7106DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 6.2 mOhm @ 19.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7106DN-T1-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7106DN-T1-E3TR-ND
Single FETs, MOSFETs SI7106DN-T1-E3TR-ND
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7106DN-T1-E3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7106DN-T1-E3CT-ND
Single FETs, MOSFETs SI7106DN-T1-E3CT-ND
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7106DN-T1-E3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7106DN-T1-E3DKR-ND
Single FETs, MOSFETs SI7106DN-T1-E3DKR-ND
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
MOSFET N-CH 20V 12.5A 1212-8 - 880-SI7106DN-T1-E3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 20V 12.5A 1212-8
880-SI7106DN-T1-E3
MOSFET N-CH 20V 12.5A 1212-8 880-SI7106DN-T1-E3
MOSFET N-CH 20V 12.5A 1212-8

MOSFET N-CH 20V 12.5A 1212-8

Supplier's Site
N Channel Mosfet, 20V, 19.5A, Powerpak; Channel Type Vishay - 51K6978 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 19.5A, Powerpak; Channel Type Vishay
51K6978
N Channel Mosfet, 20V, 19.5A, Powerpak; Channel Type Vishay 51K6978
N CHANNEL MOSFET, 20V, 19.5A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 19.5A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7106DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7106DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7106DN-T1-E3
MOSFET N-CH 20V 12.5A PPAK1212-8

MOSFET N-CH 20V 12.5A PPAK1212-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028592-SI7106DN-T1-E3 SI7106DN-T1-E3TR-ND 880-SI7106DN-T1-E3 51K6978 SI7106DN-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7106DN-T1-E3 Single FETs, MOSFETs MOSFET N-CH 20V 12.5A 1212-8 N Channel Mosfet, 20V, 19.5A, Powerpak; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK 1212-8 PowerPAK® 1212-8 TO-3 PowerPAKR 1212-8
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