N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
20V 12.5A N-CH MOSFET 6.2mR Rds On, Surface Mount Product overview: SI7106DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 12.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 12.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7106DN-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028592-SI7106DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 6.2 mOhm @ 19.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET N-CH 20V 12.5A 1212-8
N CHANNEL MOSFET, 20V, 19.5A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET N-CH 20V 12.5A PPAK1212-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7106DN-T1-E3TR-ND | 278-SI7106DN-T1-E3 | 028592-SI7106DN-T1-E3 | 880-SI7106DN-T1-E3 | 51K6978 | SI7106DN-T1-E3 |
| Product Name | Single FETs, MOSFETs | SMD 20V 12.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7106DN-T1-E3 | MOSFET N-CH 20V 12.5A 1212-8 | N Channel Mosfet, 20V, 19.5A, Powerpak; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | TO-3 | PowerPAKR 1212-8 | ||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 20 volts | 20 volts |
