Manufacturer: Vishay
Win Source Part Number: 064546-SI7104DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2800pF @ 6V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 26.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET N-CH 12V 35A PPAK 1212-8
MOSFET N-CH 12V 35A PPAK 1212-8
N-Channel 12V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 12V 35A PPAK 1212-8
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 064546-SI7104DN-T1-E3 | 742-SI7104DN-T1-E3CT-ND | SI7104DN-T1-E3 | SI7104DN-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7104DN-T1-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 12 volts | |||
| PD | 3800 to 52000 milliwatts |
