Manufacturer: Vishay
Win Source Part Number: 064545-SI7102DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 110nC @ 8V
Max Input Capacitance: 3720pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 4.5V
Alternative Parts (Cross-Reference): SI7102DN-T1-E3; STL100N1VH5; SI7102DN-T1-GE3; SiSH410DN-T1-GE3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET N-CH 12V 35A PPAK1212-8 Product overview: SI7102DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7102DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 12V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 12V 35A PPAK1212-8
MOSFET N-CH 12V 35A 1212-8
MOSFET N-CH 12V 35A PPAK1212-8
MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:52W; Product Range:-RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064545-SI7102DN-T1-GE3 | 278-SI7102DN-T1-GE3 | SI7102DN-T1-GE3TR-ND | SI7102DN-T1-GE3 | 880-SI7102DN-T1-GE3 | SI7102DN-T1-GE3 | 05W6953 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7102DN-T1-GE3 | 12V 35A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET N-CH 12V 35A 1212-8 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 12V, 35A, Powerpak 1212-8; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | ||||
| PD | 3800 to 52000 milliwatts | 3800 milliwatts | 3800 milliwatts | 3800 milliwatts | 52000 milliwatts | ||
| TJ | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | |||
| Package Type | SOT3; PowerPAK 1212-8 | Tape & Reel (TR) | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAKR 1212-8 | TO-3 |
