P-Channel MOSFET, -30V, -35A, 7.2mR, Surface Mount Product overview: SI7101DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -30V, -35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -30V, -35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7101DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 35A PPAK 1212-8
Manufacturer: Vishay
Win Source Part Number: 712145-SI7101DN-T1-G
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK 1212-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Family Name: Si7101DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK 1212-8
Channel Type Type: P
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 102nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3595pF @ 15V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 3.7W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): RQ3E120ATTB; RQ3E100ATTB; BSC080P03LSGXT;
Introduction Date: April 21, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
MOSFET, P-CH, 30V, 35A, POWERPAK 1212; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
P-CHANNEL 30-V (D-S) MOSFET
MOSFET P-CH 30V 35A PPAK 1212-8
30V 35A 7.2mΩ@10V,15A 2.5V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7101DN-T1-GE3 | SI7101DN-T1-GE3 | 712145-SI7101DN-T1-GE3 | SI7101DN-T1-GE3DKR-ND | SI7101DN-T1-GE3 | 19X1961 | 26AK9926 | SI7101DN-T1-GE3 | SI7101DN-T1-GE3 |
| Product Name | P-Channel SMD -30V -35A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7101DN-T1-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 30V, 35A, Powerpak 1212; Channel Type Vishay | P-Channel 30-V (D-S) Mosfet Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| PD | 52000 milliwatts | 3700 milliwatts | 3700 to 52000 milliwatts | 3700 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts |
