Vishay Precision Group Single FETs, MOSFETs SI7101DN-T1-GE3

Description
MOSFET P-CH 30V 35A PPAK 1212-8
Request a Quote Datasheet
Description
MOSFET P-CH 30V 35A PPAK 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7101DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7101DN-T1-GE3
Single FETs, MOSFETs SI7101DN-T1-GE3
MOSFET P-CH 30V 35A PPAK 1212-8

MOSFET P-CH 30V 35A PPAK 1212-8

Supplier's Site Datasheet
Singapore
P-Channel SMD -30V -35A MOSFET Transistor
278-SI7101DN-T1-GE3
P-Channel SMD -30V -35A MOSFET Transistor 278-SI7101DN-T1-GE3
P-Channel MOSFET, -30V, -35A, 7.2mR, Surface Mount Product overview: SI7101DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -30V, -35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -30V, -35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7101DN-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, -30V, -35A, 7.2mR, Surface Mount Product overview: SI7101DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -30V, -35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -30V, -35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7101DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7101DN-T1-GE3 - 712145-SI7101DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7101DN-T1-GE3
712145-SI7101DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7101DN-T1-GE3 712145-SI7101DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 712145-SI7101DN-T1-G E3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK 1212-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Family Name: Si7101DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK 1212-8 Channel Type Type: P Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3595pF @ 15V Vgs (Maximum): ±25V Power Dissipation (Maximum): 3.7W (Ta), 52W (Tc) Rds On (Maximum) @ Id, Vgs: 7.2 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): RQ3E120ATTB; RQ3E100ATTB; BSC080P03LSGXT; Introduction Date: April 21, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 712145-SI7101DN-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK 1212-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Family Name: Si7101DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK 1212-8
Channel Type Type: P
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 102nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3595pF @ 15V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 3.7W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): RQ3E120ATTB; RQ3E100ATTB; BSC080P03LSGXT;
Introduction Date: April 21, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI7101DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7101DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7101DN-T1-GE3DKR-ND
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7101DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7101DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7101DN-T1-GE3TR-ND
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7101DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7101DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7101DN-T1-GE3CT-ND
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7101DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7101DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7101DN-T1-GE3
MOSFET P-CH 30V 35A PPAK 1212-8

MOSFET P-CH 30V 35A PPAK 1212-8

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI7101DN-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI7101DN-T1-GE3
30V 35A 7.2mΩ@10V,15A 2.5V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS

30V 35A 7.2mΩ@10V,15A 2.5V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS

Supplier's Site Datasheet
Mosfet, P-Ch, 30V, 35A, Powerpak 1212; Channel Type Vishay - 19X1961 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 35A, Powerpak 1212; Channel Type Vishay
19X1961
Mosfet, P-Ch, 30V, 35A, Powerpak 1212; Channel Type Vishay 19X1961
MOSFET, P-CH, 30V, 35A, POWERPAK 1212; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, P-CH, 30V, 35A, POWERPAK 1212; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
P-Channel 30-V (D-S) Mosfet Vishay - 26AK9926 - Newark, An Avnet Company
Chicago, IL, United States
P-Channel 30-V (D-S) Mosfet Vishay
26AK9926
P-Channel 30-V (D-S) Mosfet Vishay 26AK9926
P-CHANNEL 30-V (D-S) MOSFET

P-CHANNEL 30-V (D-S) MOSFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8

MOSFET -30V Vds 25V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7101DN-T1-GE3 278-SI7101DN-T1-GE3 712145-SI7101DN-T1-GE3 SI7101DN-T1-GE3DKR-ND SI7101DN-T1-GE3 SI7101DN-T1-GE3 19X1961 26AK9926 SI7101DN-T1-GE3
Product Name Single FETs, MOSFETs P-Channel SMD -30V -35A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7101DN-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Mosfet, P-Ch, 30V, 35A, Powerpak 1212; Channel Type Vishay P-Channel 30-V (D-S) Mosfet Vishay MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 35000 milliamps 35000 milliamps
PD 3700 milliwatts 52000 milliwatts 3700 to 52000 milliwatts 3700 milliwatts
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