Dual P-channel 30-V (D-S) MOSFET in a TSSOP-8 package designed for load and battery switching applications. It has a drain-source on-state resistance of 0.040 Ω at -10 V gate-source voltage and 0.068 Ω at -4.5 V, with continuous drain currents of -4.2 A and -3.2 A respectively. Maximum power dissipation is 0.83 W at 70 °C ambient temperature. The device meets RoHS compliance and is halogen-free. Operating junction and storage temperature range is -55 °C to 150 °C. Thermal resistance is 124 °C/W junction-to-ambient steady state.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI6991DQ-T1-E3 |
| Product Name | MOSFET |
