Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6975DQ-T1-E3 SI6975DQ-T1-E3

Manufacturer: Vishay
Win Source Part Number: 064544-SI6975DQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.3A
Gate-Source Threshold Voltage: 450mV @ 5mA (Min)
Max Gate Charge: 30nC @ 4.5V
Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

MOSFET 2P-CH 12V 4.3A 8TSSOP Product overview: SI6975DQ-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI6975DQ-T1-E3 can be used for catalog matching and distributor lookup.