Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6954ADQ-T1-E3 SI6954ADQ-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096116-SI6954ADQ-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.1A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 16nC @ 10V Maximum Rds On at Id,Vgs: 53 mOhm @ 3.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1096116-SI6954ADQ-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.1A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 16nC @ 10V Maximum Rds On at Id,Vgs: 53 mOhm @ 3.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6954ADQ-T1-E3 - 1096116-SI6954ADQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6954ADQ-T1-E3
1096116-SI6954ADQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6954ADQ-T1-E3 1096116-SI6954ADQ-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096116-SI6954ADQ-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.1A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 16nC @ 10V Maximum Rds On at Id,Vgs: 53 mOhm @ 3.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096116-SI6954ADQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.1A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 16nC @ 10V
Maximum Rds On at Id,Vgs: 53 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 30V 3.1A TSSOP MOSFET Transistor
2088-SI6954ADQ-T1-E3
N-Channel 30V 3.1A TSSOP MOSFET Transistor 2088-SI6954ADQ-T1-E3
30V 3.1A N-Channel MOSFET, 53mR Rds On, TSSOP Product overview: SI6954ADQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 3.1A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.1A, TSSOP, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI6954ADQ-T1-E3 can be used for catalog matching and distributor lookup.

30V 3.1A N-Channel MOSFET, 53mR Rds On, TSSOP Product overview: SI6954ADQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 3.1A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.1A, TSSOP, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI6954ADQ-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - 742-SI6954ADQ-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI6954ADQ-T1-E3TR-ND
FET, MOSFET Arrays 742-SI6954ADQ-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.1A 830mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) 30V 3.1A 830mW Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI6954ADQ-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI6954ADQ-T1-E3CT-ND
FET, MOSFET Arrays 742-SI6954ADQ-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.1A 830mW Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) 30V 3.1A 830mW Surface Mount 8-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6954ADQ-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6954ADQ-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6954ADQ-T1-E3
MOSFET 2N-CH 30V 3.1A 8TSSOP

MOSFET 2N-CH 30V 3.1A 8TSSOP

Supplier's Site
FET, MOSFET Arrays - SI6954ADQ-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI6954ADQ-T1-E3
FET, MOSFET Arrays SI6954ADQ-T1-E3
MOSFET 2N-CH 30V 3.1A 8TSSOP

MOSFET 2N-CH 30V 3.1A 8TSSOP

Supplier's Site Datasheet
Transistor Polarity Vishay - 85W2162 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Vishay
85W2162
Transistor Polarity Vishay 85W2162
Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.1A; On Resistance Rds(on):0.044ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: No

Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.1A; On Resistance Rds(on):0.044ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: No

Supplier's Site Datasheet
Dual Mosfet, Dual N Channel, 3.1 A, 30 V, 0.044 Ohm, 10 V, 1 V Rohs Compliant Vishay - 97W2681 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual N Channel, 3.1 A, 30 V, 0.044 Ohm, 10 V, 1 V Rohs Compliant Vishay
97W2681
Dual Mosfet, Dual N Channel, 3.1 A, 30 V, 0.044 Ohm, 10 V, 1 V Rohs Compliant Vishay 97W2681
Dual MOSFET, Dual N Channel, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V RoHS Compliant: Yes

Dual MOSFET, Dual N Channel, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel, Mosfet, 30V, 3.4A, Tssop, Full Reel; Transistor Polarity Vishay - 06J8115 - Newark, An Avnet Company
Chicago, IL, United States
N Channel, Mosfet, 30V, 3.4A, Tssop, Full Reel; Transistor Polarity Vishay
06J8115
N Channel, Mosfet, 30V, 3.4A, Tssop, Full Reel; Transistor Polarity Vishay 06J8115
N CHANNEL, MOSFET, 30V, 3.4A, TSSOP, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(on):0.044ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

N CHANNEL, MOSFET, 30V, 3.4A, TSSOP, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(on):0.044ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs TSSOP-8

MOSFET 30V Vds 20V Vgs TSSOP-8

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096116-SI6954ADQ-T1-E3 2088-SI6954ADQ-T1-E3 742-SI6954ADQ-T1-E3TR-ND SI6954ADQ-T1-E3 SI6954ADQ-T1-E3 85W2162 97W2681 06J8115 SI6954ADQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6954ADQ-T1-E3 N-Channel 30V 3.1A TSSOP MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays Transistor Polarity Vishay Dual Mosfet, Dual N Channel, 3.1 A, 30 V, 0.044 Ohm, 10 V, 1 V Rohs Compliant Vishay N Channel, Mosfet, 30V, 3.4A, Tssop, Full Reel; Transistor Polarity Vishay MOSFET
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 830 milliwatts 830 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-TSSOP "8-TSSOP (0.173"", 4.40mm Width)" 8-TSSOP (0.173", 4.40mm Width) TO-3 TO-3 TO-3
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