Vishay Intertechnology, Inc. FET, MOSFET Arrays SI6925ADQ-T1-GE3

Description
MOSFET 2N-CH 20V 3.3A 8-TSSOP
Request a Quote Datasheet
Description
MOSFET 2N-CH 20V 3.3A 8-TSSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI6925ADQ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI6925ADQ-T1-GE3
FET, MOSFET Arrays SI6925ADQ-T1-GE3
MOSFET 2N-CH 20V 3.3A 8-TSSOP

MOSFET 2N-CH 20V 3.3A 8-TSSOP

Supplier's Site Datasheet
Singapore
20V 3.3A MOSFET Transistor
289-SI6925ADQ-T1-GE3
20V 3.3A MOSFET Transistor 289-SI6925ADQ-T1-GE3
MOSFET 2N-CH 20V 3.3A 8TSSOP Product overview: SI6925ADQ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI6925ADQ-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 3.3A 8TSSOP Product overview: SI6925ADQ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI6925ADQ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6925ADQ-T1-GE3 - 1096113-SI6925ADQ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6925ADQ-T1-GE3
1096113-SI6925ADQ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6925ADQ-T1-GE3 1096113-SI6925ADQ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096113-SI6925ADQ-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.3A Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 6nC @ 4.5V Maximum Rds On at Id,Vgs: 45 mOhm @ 3.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096113-SI6925ADQ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.3A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6925ADQ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6925ADQ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6925ADQ-T1-GE3
MOSFET 2N-CH 20V 3.3A 8TSSOP

MOSFET 2N-CH 20V 3.3A 8TSSOP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI6925ADQ-T1-GE3 289-SI6925ADQ-T1-GE3 1096113-SI6925ADQ-T1-GE3 SI6925ADQ-T1-GE3
Product Name FET, MOSFET Arrays 20V 3.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6925ADQ-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 3300 milliamps
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