MOSFET 2N-CH 20V 3.3A 8-TSSOP
MOSFET 2N-CH 20V 3.3A 8TSSOP Product overview: SI6925ADQ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI6925ADQ-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 1096113-SI6925ADQ-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.3A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 20V 3.3A 8TSSOP
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI6925ADQ-T1-GE3 | 289-SI6925ADQ-T1-GE3 | 1096113-SI6925ADQ-T1-GE3 | SI6925ADQ-T1-GE3 |
| Product Name | FET, MOSFET Arrays | 20V 3.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6925ADQ-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 20 volts | 20 volts | ||
| IDSS | 3300 milliamps |