Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6913DQ-T1-GE3 SI6913DQ-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 064541-SI6913DQ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si6913DQ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 900mV @ 400μA Max Gate Charge: 28nC @ 4.5V Maximum Rds On at Id,Vgs: 21 mOhm @ 5.8A, 4.5V Alternative Parts (Cross-Reference): AO8807L; FDW2508PB; FDW2508P_NL; FDW2508P-NF40; Introduction Date: September 10, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 064541-SI6913DQ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si6913DQ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 900mV @ 400μA Max Gate Charge: 28nC @ 4.5V Maximum Rds On at Id,Vgs: 21 mOhm @ 5.8A, 4.5V Alternative Parts (Cross-Reference): AO8807L; FDW2508PB; FDW2508P_NL; FDW2508P-NF40; Introduction Date: September 10, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6913DQ-T1-GE3 - 064541-SI6913DQ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6913DQ-T1-GE3
064541-SI6913DQ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6913DQ-T1-GE3 064541-SI6913DQ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064541-SI6913DQ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si6913DQ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 900mV @ 400μA Max Gate Charge: 28nC @ 4.5V Maximum Rds On at Id,Vgs: 21 mOhm @ 5.8A, 4.5V Alternative Parts (Cross-Reference): AO8807L; FDW2508PB; FDW2508P_NL; FDW2508P-NF40; Introduction Date: September 10, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064541-SI6913DQ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si6913DQ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 900mV @ 400μA
Max Gate Charge: 28nC @ 4.5V
Maximum Rds On at Id,Vgs: 21 mOhm @ 5.8A, 4.5V
Alternative Parts (Cross-Reference): AO8807L; FDW2508PB; FDW2508P_NL; FDW2508P-NF40;
Introduction Date: September 10, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
12V 4.9A TSSOP MOSFET Transistor
2088-SI6913DQ-T1-GE3
12V 4.9A TSSOP MOSFET Transistor 2088-SI6913DQ-T1-GE3
P-CH MOSFET 12V 4.9A 21mR TSSOP 8-Pin SMT Product overview: SI6913DQ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.9A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.9A, TSSOP, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI6913DQ-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 12V 4.9A 21mR TSSOP 8-Pin SMT Product overview: SI6913DQ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.9A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.9A, TSSOP, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI6913DQ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI6913DQ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI6913DQ-T1-GE3TR-ND
FET, MOSFET Arrays SI6913DQ-T1-GE3TR-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP

Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI6913DQ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI6913DQ-T1-GE3DKR-ND
FET, MOSFET Arrays SI6913DQ-T1-GE3DKR-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP

Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI6913DQ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI6913DQ-T1-GE3CT-ND
FET, MOSFET Arrays SI6913DQ-T1-GE3CT-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP

Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET -12V Vds 8V Vgs TSSOP-8

MOSFET -12V Vds 8V Vgs TSSOP-8

Buy Now Datasheet
Mosfet, Dual P Channel, -12V, 4.9A, Tssop-8; Transistor Polarity Vishay - 09X6442 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual P Channel, -12V, 4.9A, Tssop-8; Transistor Polarity Vishay
09X6442
Mosfet, Dual P Channel, -12V, 4.9A, Tssop-8; Transistor Polarity Vishay 09X6442
MOSFET, DUAL P CHANNEL, -12V, - 4.9A, TSSOP-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

MOSFET, DUAL P CHANNEL, -12V, - 4.9A, TSSOP-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N/p Channel Mosfet, -12V Tssop, Full Reel; Transistor Polarity Vishay - 16P3808 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, -12V Tssop, Full Reel; Transistor Polarity Vishay
16P3808
Dual N/p Channel Mosfet, -12V Tssop, Full Reel; Transistor Polarity Vishay 16P3808
DUAL N/P CHANNEL MOSFET, -12V TSSOP, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, -12V TSSOP, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site
FET, MOSFET Arrays - SI6913DQ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI6913DQ-T1-GE3
FET, MOSFET Arrays SI6913DQ-T1-GE3
MOSFET 2P-CH 12V 4.9A 8-TSSOP

MOSFET 2P-CH 12V 4.9A 8-TSSOP

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6913DQ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6913DQ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6913DQ-T1-GE3
MOSFET 2P-CH 12V 4.9A 8TSSOP

MOSFET 2P-CH 12V 4.9A 8TSSOP

Supplier's Site
12V 4.9A 830mW 21mΩ@4.5V,5.8A 900mV@400uA 2 P-Channel TSSOP-8(3x4.4x0.65) MOSFETs ROHS - 17930-SI6913DQ-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
12V 4.9A 830mW 21mΩ@4.5V,5.8A 900mV@400uA 2 P-Channel TSSOP-8(3x4.4x0.65) MOSFETs ROHS
17930-SI6913DQ-T1-GE3
12V 4.9A 830mW 21mΩ@4.5V,5.8A 900mV@400uA 2 P-Channel TSSOP-8(3x4.4x0.65) MOSFETs ROHS 17930-SI6913DQ-T1-GE3
12V 4.9A 830mW 21mΩ@4.5V,5.8A 900mV@400uA 2 P-Channel TSSOP-8(3x4.4x0.65) MOSFETs ROHS

12V 4.9A 830mW 21mΩ@4.5V,5.8A 900mV@400uA 2 P-Channel TSSOP-8(3x4.4x0.65) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 064541-SI6913DQ-T1-GE3 2088-SI6913DQ-T1-GE3 SI6913DQ-T1-GE3TR-ND SI6913DQ-T1-GE3 09X6442 SI6913DQ-T1-GE3 SI6913DQ-T1-GE3 17930-SI6913DQ-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6913DQ-T1-GE3 12V 4.9A TSSOP MOSFET Transistor FET, MOSFET Arrays MOSFET Mosfet, Dual P Channel, -12V, 4.9A, Tssop-8; Transistor Polarity Vishay FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs 12V 4.9A 830mW 21mΩ@4.5V,5.8A 900mV@400uA 2 P-Channel TSSOP-8(3x4.4x0.65) MOSFETs ROHS
Polarity P-Channel P-Channel P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 12 volts 12 volts
PD 830 milliwatts 830 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-TSSOP "8-TSSOP (0.173"", 4.40mm Width)" TO-3 8-TSSOP (0.173", 4.40mm Width)
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