Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6820DQ-T1-E3 SI6820DQ-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 988242-SI6820DQ-T1-E 3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Number of Channels: 1 Rise Time: 10 ns Fall Time: 10 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.2 W Turn-On Delay Time: 18 ns Continuous Drain Current (ID): 1.9 A Turn-Off Delay Time: 12 ns Drain to Source Resistance: 160 mΩ Gate to Source Voltage (Vgs): 12 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 988242-SI6820DQ-T1-E 3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Number of Channels: 1 Rise Time: 10 ns Fall Time: 10 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.2 W Turn-On Delay Time: 18 ns Continuous Drain Current (ID): 1.9 A Turn-Off Delay Time: 12 ns Drain to Source Resistance: 160 mΩ Gate to Source Voltage (Vgs): 12 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6820DQ-T1-E3 - 988242-SI6820DQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6820DQ-T1-E3
988242-SI6820DQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6820DQ-T1-E3 988242-SI6820DQ-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 988242-SI6820DQ-T1-E 3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Number of Channels: 1 Rise Time: 10 ns Fall Time: 10 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.2 W Turn-On Delay Time: 18 ns Continuous Drain Current (ID): 1.9 A Turn-Off Delay Time: 12 ns Drain to Source Resistance: 160 mΩ Gate to Source Voltage (Vgs): 12 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 988242-SI6820DQ-T1-E3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 20 V
Number of Channels: 1
Rise Time: 10 ns
Fall Time: 10 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSSOP
Popularity: Low
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 1.2 W
Turn-On Delay Time: 18 ns
Continuous Drain Current (ID): 1.9 A
Turn-Off Delay Time: 12 ns
Drain to Source Resistance: 160 mΩ
Gate to Source Voltage (Vgs): 12 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 988242-SI6820DQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6820DQ-T1-E3
Package Type SOT3; TSSOP
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