Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI6473DQ-T1-GE3

Description
Win Source Part Number: 1277501-SI6473DQ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Power Dissipation (Max): 1.08W (Ta) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI6473 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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Description
Win Source Part Number: 1277501-SI6473DQ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Power Dissipation (Max): 1.08W (Ta) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI6473 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277501-SI6473DQ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277501-SI6473DQ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277501-SI6473DQ-T1-GE3
Win Source Part Number: 1277501-SI6473DQ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Power Dissipation (Max): 1.08W (Ta) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI6473 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Win Source Part Number: 1277501-SI6473DQ-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 1.08W (Ta)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SI6473
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6473DQ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6473DQ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6473DQ-T1-GE3
MOSFET P-CH 20V 6.2A 8TSSOP

MOSFET P-CH 20V 6.2A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 1277501-SI6473DQ-T1-GE3 SI6473DQ-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
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