Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6465DQ-T1-E3 SI6465DQ-T1-E3

Manufacturer: Vishay Win Source Part Number: 028586-SI6465DQ-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 8.8A (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 80nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 12 mOhm @ 8.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance