Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6459BDQ-T1-E3 SI6459BDQ-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 104274-SI6459BDQ-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 115 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 104274-SI6459BDQ-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 115 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6459BDQ-T1-E3 - 104274-SI6459BDQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6459BDQ-T1-E3
104274-SI6459BDQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6459BDQ-T1-E3 104274-SI6459BDQ-T1-E3
Manufacturer: Vishay Win Source Part Number: 104274-SI6459BDQ-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 115 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 104274-SI6459BDQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 115 mOhm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI6459BDQ-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI6459BDQ-T1-E3TR-ND
Single FETs, MOSFETs SI6459BDQ-T1-E3TR-ND
P-Channel 60V 2.2A (Ta) 1W (Ta) Surface Mount 8-TSSOP

P-Channel 60V 2.2A (Ta) 1W (Ta) Surface Mount 8-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6459BDQ-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6459BDQ-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6459BDQ-T1-E3
MOSFET P-CH 60V 2.2A 8TSSOP

MOSFET P-CH 60V 2.2A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 104274-SI6459BDQ-T1-E3 SI6459BDQ-T1-E3TR-ND SI6459BDQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6459BDQ-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts
PD 1000 milliwatts
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