Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6433BDQ-T1-GE3 SI6433BDQ-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 104771-SI6433BDQ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.05W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

MOSFET P-CH 12V 4A 8TSSOP

MOSFET P-CH 12V 4A 8TSSOP Product overview: SI6433BDQ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6433BDQ-T1-GE3 can be used for catalog matching and distributor lookup.