Manufacturer: Vishay Siliconix
Win Source Part Number: 794302-SI6423DQ-T1-G
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-TSSOP (0.173", 4.40mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Family Name: Si6423DQ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Manufacturer Package: 8-TSSOP
Channel Type Type: P
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 800mV @ 400μA
Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 5V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 1.05W (Ta)
Rds On (Maximum) @ Id, Vgs: 8.5 mOhm @ 9.5A, 4.5V
Alternative Parts (Cross-Reference): IRF7701TRPBF; IRF7701; IRF7701PBF; IRF7701TR;
Introduction Date: July 01, 2003
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
P-CH JFET, 12V, 8.2A, 8.5mR, TSSOP Product overview: SI6423DQ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 8.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6423DQ-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
MOSFET, P-CH, 12V, 8.2A, 150DEG C, 1.05W; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8.2A; On Resistance Rds(on):0.0068ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:800mV RoHS Compliant: Yes
P CHANNEL MOSFET, -12V, 9.5A, TSSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Power Dissipation:1.05W RoHS Compliant: Yes
MOSFET -12V Vds 8V Vgs TSSOP-8
MOSFET P-CH 12V 8.2A 8TSSOP
MOSFET P-CH 12V 8.2A 8TSSOP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 794302-SI6423DQ-T1-GE3 | 278-SI6423DQ-T1-GE3 | SI6423DQ-T1-GE3CT-ND | 97W2676 | 16P3801 | SI6423DQ-T1-GE3 | SI6423DQ-T1-GE3 | SI6423DQ-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6423DQ-T1-GE3 | 12V 8.2A TSSOP MOSFET Transistor | Single FETs, MOSFETs | Mosfet, P-Ch, 12V, 8.2A, 150Deg C, 1.05W; Transistor Polarity Vishay | P Channel Mosfet, -12V, 9.5A, Tssop, Full Reel; Channel Type Vishay | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1050 milliwatts | 1050 milliwatts | 1050 milliwatts | 1050 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | "8-TSSOP (0.173"", 4.40mm Width)" | TO-3 | TO-3 | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173, 4.40mm Width) | ||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel |
