P-CH MOSFET 12V 8.2A 8.5mR TSSOP Product overview: SI6423DQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 8.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6423DQ-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
Manufacturer: Vishay
Win Source Part Number: 028585-SI6423DQ-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.05W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8.2A (Ta)
Gate-Source Threshold Voltage: 800mV @ 400μA
Max Gate Charge: 110nC @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 9.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET P-CH 12V 8.2A 8TSSOP
Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV; Power Dissipation:1.5W; No. of Pins:8Pins RoHS Compliant: No
P CHANNEL MOSFET, -12V, 9.5A, TSSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.05W RoHS Compliant: Yes
MOSFET -12V Vds 8V Vgs TSSOP-8
MOSFET P-CH 12V 8.2A 8TSSOP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI6423DQ-T1-E3 | SI6423DQ-T1-E3TR-ND | 028585-SI6423DQ-T1-E3 | SI6423DQ-T1-E3 | 85W2157 | 06J8059 | SI6423DQ-T1-E3 | SI6423DQ-T1-E3 |
| Product Name | 12V 8.2A TSSOP MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6423DQ-T1-E3 | Single FETs, MOSFETs | Channel Type Vishay | P Channel Mosfet, -12V, 9.5A, Tssop, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| PD | 1050 milliwatts | 1050 milliwatts | 1050 milliwatts | 1050 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | "8-TSSOP (0.173"", 4.40mm Width)" | SOT3; 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) | TO-3 | TO-3 | 8-TSSOP (0.173, 4.40mm Width) |
