Manufacturer: Vishay
Win Source Part Number: 028585-SI6423DQ-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.05W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8.2A (Ta)
Gate-Source Threshold Voltage: 800mV @ 400μA
Max Gate Charge: 110nC @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 9.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
MOSFET P-CH 12V 8.2A 8TSSOP
Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV; Power Dissipation:1.5W; No. of Pins:8Pins RoHS Compliant: No
P CHANNEL MOSFET, -12V, 9.5A, TSSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.05W RoHS Compliant: Yes
MOSFET -12V Vds 8V Vgs TSSOP-8
MOSFET P-CH 12V 8.2A 8TSSOP
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028585-SI6423DQ-T1-E3 | SI6423DQ-T1-E3TR-ND | SI6423DQ-T1-E3 | 85W2157 | 06J8059 | SI6423DQ-T1-E3 | SI6423DQ-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6423DQ-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Channel Type Vishay | P Channel Mosfet, -12V, 9.5A, Tssop, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 12 volts | 12 volts | |||||
| PD | 1050 milliwatts | 1050 milliwatts | 1050 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
