P-CH MOSFET, 30V, 6.5A, 19mR, TSSOP-8, Power Product overview: SI6415DQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.5A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.5A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6415DQ-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 6.5A 8TSSOP
P-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP
P-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP
P-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP
Manufacturer: Vishay
Win Source Part Number: 103003-SI6415DQ-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 70nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
MOSFET P-CH 30V 6.5A 8TSSOP
P CHANNEL MOSFET, -30V, 6.5A, TSSOP; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, P-CH, 30V, 6.5A, TSSOP ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI6415DQ-T1-E3 | SI6415DQ-T1-E3 | SI6415DQ-T1-E3TR-ND | 103003-SI6415DQ-T1-E3 | SI6415DQ-T1-E3 | 65K1938 | 57AJ0453 |
| Product Name | 30V 6.5A TSSOP MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6415DQ-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -30V, 6.5A, Tssop; Channel Type Vishay | Mosfet, P-Ch, 30V, 6.5A, Tssop Rohs Compliant Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |