Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6410DQ-T1-E3 SI6410DQ-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 127434-SI6410DQ-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 33nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 127434-SI6410DQ-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 33nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6410DQ-T1-E3 - 127434-SI6410DQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6410DQ-T1-E3
127434-SI6410DQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6410DQ-T1-E3 127434-SI6410DQ-T1-E3
Manufacturer: Vishay Win Source Part Number: 127434-SI6410DQ-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 33nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 127434-SI6410DQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 33nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6410DQ-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6410DQ-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6410DQ-T1-E3
MOSFET N-CH 30V 8TSSOP

MOSFET N-CH 30V 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 127434-SI6410DQ-T1-E3 SI6410DQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6410DQ-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 1500 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRAH - 854965-2N3904RLRAH - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die - QPD2025D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
View Details
2 suppliers
Single FETs, MOSFETs - 448-AUIRF7737L2TRDKR-ND - DigiKey
Specs
Polarity N-Channel
Package Type DirectFET™ Isometric L6
Transistor Grade / Operating Range Automotive
View Details
3 suppliers