Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5935DC-T1-GE3 SI5935DC-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096099-SI5935DC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Maximum Rds On at Id,Vgs: 86 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096099-SI5935DC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Maximum Rds On at Id,Vgs: 86 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5935DC-T1-GE3 - 1096099-SI5935DC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5935DC-T1-GE3
1096099-SI5935DC-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5935DC-T1-GE3 1096099-SI5935DC-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096099-SI5935DC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Maximum Rds On at Id,Vgs: 86 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096099-SI5935DC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 8.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 86 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5935DC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5935DC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5935DC-T1-GE3
MOSFET 2P-CH 20V 3A 1206-8

MOSFET 2P-CH 20V 3A 1206-8

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096099-SI5935DC-T1-GE3 SI5935DC-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5935DC-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
PD 1100 milliwatts
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