Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5920DC-T1-E3

Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™

Manufacturer: Vishay
Win Source Part Number: 105385-SI5920DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 680pF @ 4V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 8V 4A 1206-8 Product overview: SI5920DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5920DC-T1-E3 can be used for catalog matching and distributor lookup.