Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5920DC-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI5920DC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5920DC-T1-E3TR-ND
FET, MOSFET Arrays SI5920DC-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™

Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3 - 105385-SI5920DC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3
105385-SI5920DC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3 105385-SI5920DC-T1-E3
Manufacturer: Vishay Win Source Part Number: 105385-SI5920DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.12W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 680pF @ 4V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 105385-SI5920DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 680pF @ 4V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
8V 4A MOSFET Transistor
289-SI5920DC-T1-E3
8V 4A MOSFET Transistor 289-SI5920DC-T1-E3
MOSFET 2N-CH 8V 4A 1206-8 Product overview: SI5920DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5920DC-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 8V 4A 1206-8 Product overview: SI5920DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5920DC-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5920DC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5920DC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5920DC-T1-E3
MOSFET 2N-CH 8V 4A 1206-8

MOSFET 2N-CH 8V 4A 1206-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5920DC-T1-E3TR-ND 105385-SI5920DC-T1-E3 289-SI5920DC-T1-E3 SI5920DC-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3 8V 4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-SMD, Flat Leads SOT3; 1206-8 ChipFET Tape & Reel (TR)
Polarity N-Channel
V(BR)DSS 8 volts
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