Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3 SI5920DC-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 105385-SI5920DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.12W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 680pF @ 4V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 105385-SI5920DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.12W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 680pF @ 4V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3 - 105385-SI5920DC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3
105385-SI5920DC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3 105385-SI5920DC-T1-E3
Manufacturer: Vishay Win Source Part Number: 105385-SI5920DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.12W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 680pF @ 4V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 105385-SI5920DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 680pF @ 4V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI5920DC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5920DC-T1-E3TR-ND
FET, MOSFET Arrays SI5920DC-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™

Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5920DC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5920DC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5920DC-T1-E3
MOSFET 2N-CH 8V 4A 1206-8

MOSFET 2N-CH 8V 4A 1206-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 105385-SI5920DC-T1-E3 SI5920DC-T1-E3TR-ND SI5920DC-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5920DC-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 8 volts
PD 3120 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS200 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF3504 - 1020712-AUIRF3504 - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 143000 milliwatts
View Details
3 suppliers
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor - QPD1009 - Qorvo
Specs
Transistor Technology / Material DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers